Marketing Dept.: Glen Liu
Tel: (+86) 181 8861 1190
Email:ge_liu@phograin.com

Technical Support: Max Xu
Tel: (+86) 181 8861 1183
Email: hu_xu@phograin.com

F4, Building A5, Nanshan i-Park, No.1001, Xueyuan Blvd, Nanshan District, Shenzhen City, Guangdong Prov., China.
Tel: (+86) 755 2371 2706

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Tel: (+86) 516 8325 8257

10Gbps Φ40μm Top-illuminated APD Chip

P/N: XSJ-10-APD5-40

This 10Gbps avalanche photodiode chip (APD chip) is a kind of Ground-Signal-Ground (GSG) electrode structure, with top-illuminated active area size is Φ40μm. This product features is high multiplication, low capacitance, high bandwidth, low temperature coefficient and excellent reliability, application in 10G SONET/SDH and 10G PON optical receiver.

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Description

Features

  1. Φ40μm active area.
  2. High multiplication.
  3. High data rate.
  4. Low temperature coefficient.
  5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
  6. 100% testing and inspection.

Applications

  1. 10G SONET/SDH
  2. 10G PON

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